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Async Fast SRAM
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Async Fast SRAM

used to be employed for fast access time
Static random access memory faster than DRAM, and depends on the CPU clock,
Access speed 12ns, 15ns and 18ns three, the smaller the value, said the faster access to data.
RenesasRenesas Electronics Corporation is a leading global semiconductor company and a premier supplier of  a premier supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices.The following are the product parameters of Async Fast SRAM:4Mb Density;3.0V to 3.6V,4.5V to 5.5V Supply voltage;TSOPII(44),SOJ(44),SOJ(36) Package Type.
Part Number Density Organization(bit) Access time(ns) Supply voltage(V) Operating temperature (°C) PackageType Download
R1RW0416DSB-2SR 4Mb x 16 12 3.0 to 3.6 0°C to 70°C TSOPII(44) Contact Us
R1RW0416DSB-2PR 4Mb x 16 12 3.0 to 3.6 0°C to 70°C TSOPII(44) Contact Us
R1RW0416DSB-2PI 4Mb x 16 12 3.0 to 3.6 -40°C to 85°C TSOPII(44) Contact Us
R1RW0416DSB-2LR 4Mb x 16 12 3.0 to 3.6 0 °Cto 70°C TSOPII(44) Contact Us
R1RW0416DSB-0PR 4Mb x 16 10 3.0 to 3.6 0 °Cto 70°C TSOPII(44) Contact Us
R1RW0416DSB-0PI 4Mb x 16 10 3.0 to 3.6 -40°C to 85°C TSOPII(44) Contact Us
R1RW0416DGE-2SR 4Mb x 16 12 3.0 to 3.6 0°C to 70°C SOJ(44) Contact Us
R1RW0416DGE-2PR 4Mb x 16 12 3.0 to 3.6 0°C to 70°C SOJ(44) Contact Us
R1RW0416DGE-2PI 4Mb x 16 12 3.0 to 3.6 -40°C to 85°C SOJ(44) Contact Us
R1RW0416DGE-2LR 4Mb x 16 12 3.0 to 3.6 0 °Cto 70°C SOJ(44) Contact Us
R1RW0408DGE-2PR 4Mb x 8 12 3.0 to 3.6 0 °Cto 70°C SOJ(36) Contact Us
R1RW0408DGE-2PI 4Mb x 8 12 3.0 to 3.6 -40°C to 85°C SOJ(36) Contact Us
R1RW0408DGE-2LR 4Mb x 8 12 3.0 to 3.6 0 °Cto 70°C SOJ(36) Contact Us
R1RW0408DGE-0PR 4Mb x 8 10 3.0 to 3.6 0 °Cto 70°C SOJ(36) Contact Us
R1RP0416DSB-2SR 4Mb x 16 12 4.5 to 5.5 0 °Cto 70°C TSOPII(44) Contact Us
R1RP0416DSB-2PR 4Mb x 16 12 4.5 to 5.5 0 °Cto 70°C TSOPII(44) Contact Us
R1RP0416DSB-2PI 4Mb x 16 12 4.5 to 5.5 -40°C to 85°C TSOPII(44) Contact Us
R1RP0416DSB-2LR 4Mb x 16 12 4.5 to 5.5 0 °Cto 70°C TSOPII(44) Contact Us
R1RP0416DSB-0PR 4Mb x 16 10 4.5 to 5.5 0 °Cto 70°C TSOPII(44) Contact Us
R1RP0416DSB-0PI 4Mb x 16 10 4.5 to 5.5 -40°C to 85°C TSOPII(44) Contact Us
R1RP0416DGE-2SR 4Mb x 16 12 4.5 to 5.5 0 °Cto 70°C SOJ(44) Contact Us
R1RP0416DGE-2PR 4Mb x 16 12 4.5 to 5.5 0 °Cto 70°C SOJ(44) Contact Us
R1RP0416DGE-2PI 4Mb x 16 12 4.5 to 5.5 -40°C to 85°C SOJ(44) Contact Us
R1RP0416DGE-2LR 4Mb x 16 12 4.5 to 5.5 0 °Cto 70°C SOJ(44) Contact Us
R1RP0408DGE-2PR 4Mb x 8 12 4.5 to 5.5 0 °Cto 70°C SOJ(36) Contact Us
R1RP0408DGE-2PI 4Mb x 8 12 4.5 to 5.5 -40°C to 85°C SOJ(36) Contact Us
R1RP0408DGE-2LR 4Mb x 8 12 4.5 to 5.5 0 °Cto 70°C SOJ(36) Contact Us
R1RW0416DGE-0PR 4Mb x 16 10 3.0 to 3.6 0 °Cto 70°C SOJ(44) Contact Us
R1RW0416DGE-0PI 4Mb x 16 10 3.0 to 3.6 -40°C to 85°C SOJ(44) Contact Us
R1RW0408DGE-0PI 4Mb x 8 10 3.0 to 3.6 -40°C to 85°C SOJ(36) Contact Us
R1RP0416DGE-0PI 4Mb x 16 10 4.5 to 5.5 -40°C to 85°C SOJ(44) Contact Us
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